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STB7NK80ZT4 - ONSEMI MJD31T4G

STB7NK80ZT4

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STMicroelectronics

POWER MOSFET, N CHANNEL, 800 V, 2.6 A, 1.5 OHM, TO-263 (D2PAK), SURFACE MOUNT

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STB7NK80ZT4 - ONSEMI MJD31T4G

STB7NK80ZT4

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 800 V, 2.6 A, 1.5 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Technical Specifications

Parameters and characteristics for this part

SpecificationSTB7NK80ZT4
Current - Continuous Drain (Id) @ 25°C5.2 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs56 nC
Input Capacitance (Ciss) (Max) @ Vds1138 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs1.8 Ohm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.84
10$ 2.39
100$ 1.93
500$ 1.72
Digi-Reel® 1$ 2.84
10$ 2.39
100$ 1.93
500$ 1.72
Tape & Reel (TR) 1000$ 1.47
2000$ 1.38
5000$ 1.33
NewarkEach (Supplied on Cut Tape) 1$ 3.25
10$ 2.59
25$ 2.38
50$ 2.18
100$ 1.97
250$ 1.84
500$ 1.66

Description

General part information

STB7NK80 Series

The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh products.Extremely high dv/dt capability100% avalange testedGate charge minimizedVery low intrinsic capacitancesVery good manufacturing repeatibility

Documents

Technical documentation and resources