
STB7NK80ZT4
ActivePOWER MOSFET, N CHANNEL, 800 V, 2.6 A, 1.5 OHM, TO-263 (D2PAK), SURFACE MOUNT
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STB7NK80ZT4
ActivePOWER MOSFET, N CHANNEL, 800 V, 2.6 A, 1.5 OHM, TO-263 (D2PAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB7NK80ZT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.2 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1138 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
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Description
General part information
STB7NK80 Series
The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh products.Extremely high dv/dt capability100% avalange testedGate charge minimizedVery low intrinsic capacitancesVery good manufacturing repeatibility
Documents
Technical documentation and resources