SPP47N10

Obsolete

Infineon Technologies

MOSFET N-CH 100V 47A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 47A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP47N10

Current - Continuous Drain (Id) @ 25°C	47 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	105 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	175 W
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Power Dissipation (Max) [Max]	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies SPP47N10	MOSFET (Metal Oxide)	175 W	20 V	TO-220-3	4 V	33 mOhm	10 V	PG-TO220-3-1	2500 pF	-55 °C	175 ░C	N-Channel	100 V	47 A	Through Hole	105 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 47A (Tc) 175W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources