RN2424(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	RN2424(TE85L,F)

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	90 hFE
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	S-Mini
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Frequency - Transition	Resistor - Base (R1)
Toshiba Semiconductor and Storage RN2424(TE85L,F)	PNP - Pre-Biased	S-Mini	SC-59 SOT-23-3 TO-236-3	500 nA	90 hFE	200 mW	Surface Mount	50 V	800 mA	250 mV	10 kOhms	200 MHz	10 kOhms

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 800 mA 200 MHz 200 mW Surface Mount S-Mini

Technical documentation and resources