SPD02N50C3BTMA1

Obsolete

Infineon Technologies

LOW POWER_LEGACY

Search across all available documentation for this part.

Obsolete

Infineon Technologies

LOW POWER_LEGACY

Technical Specifications

Parameters and characteristics for this part

Specification	SPD02N50C3BTMA1

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	9 nC
Input Capacitance (Ciss) (Max) @ Vds	190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	PG-TO252-3-311
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id
Infineon Technologies SPD02N50C3BTMA1	9 nC	500 V	N-Channel	20 V	Surface Mount	190 pF	10 V	-55 °C	150 °C	3 Ohm	PG-TO252-3-311	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.8 A	25 W	3.9 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO252-3-311

Technical documentation and resources