R6076ENZ4C13
ActiveRohm Semiconductor
MOSFETS NCH 600V 76A POWER MOSFET. R6076ENZ4 IS A POWER MOSFET FOR SWITCHING APPLICATIONS.
R6076ENZ4C13
ActiveRohm Semiconductor
MOSFETS NCH 600V 76A POWER MOSFET. R6076ENZ4 IS A POWER MOSFET FOR SWITCHING APPLICATIONS.
Description
General part information
R6076 Series
R6076ENZ4 is a power MOSFET for switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | R6076ENZ4C13 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 76 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 260 nC |
| Input Capacitance (Ciss) (Max) | 6500 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Power Dissipation (Max) | 735 W |
| Rds On (Max) | 42 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
How to Use LTspice® Models
MOSFET Gate Drive Current Setting for Motor Driving
Precautions When Measuring the Rear of the Package with a Thermocouple
What Is Thermal Design
Temperature derating method for Safe Operating Area (SOA)
TO247AD Explanation for Marking
Compliance of the RoHS directive
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Measurement Method and Usage of Thermal Resistance RthJC
R6076ENZ4 Data Sheet
Package Dimensions
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Anti-Whisker formation - Transistors
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Importance of Probe Calibration When Measuring Power: Deskew
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
How to Create Symbols for PSpice Models
ROHM Solution Simulator Power Device User's Guide for Inverter
Moisture Sensitivity Level - Transistors
Report of SVHC under REACH Regulation
Impedance Characteristics of Bypass Capacitor
Basics of Thermal Resistance and Heat Dissipation
θ<sub>JA</sub> and Ψ<sub>JT</sub>
MOSFET Gate Resistor Setting for Motor Driving
List of Transistor Package Thermal Resistance
Judgment Criteria of Thermal Evaluation
Notes for Temperature Measurement Using Forward Voltage of PN Junction
What is a Thermal Model? (Transistor)
Method for Monitoring Switching Waveform
About Flammability of Materials
Notes for Temperature Measurement Using Thermocouples
Types and Features of Transistors
Notes for Calculating Power Consumption:Static Operation
How to Use LTspice® Models: Tips for Improving Convergence
Part Explanation
PCB Layout Thermal Design Guide
Calculation of Power Dissipation in Switching Circuit
About Export Regulations
R6076ENZ4 ESD Data
Two-Resistor Model for Thermal Simulation
Technical Data Sheet EN
