L6384E

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STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8DIP

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L6384E

Unknown

STMicroelectronics

IC GATE DRVR HALF-BRIDGE 8DIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	L6384E

Channel Type	Synchronous
Current - Peak Output (Source, Sink) [custom]	400 mA
Current - Peak Output (Source, Sink) [custom]	650 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Inverting
Logic Voltage - VIL, VIH	1.5 V, 3.6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-45 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	30 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-DIP
Voltage - Supply [Max]	16.6 V
Voltage - Supply [Min]	14.6 V

L6384E Series

High voltage high and low side driver with bootstrap diode

Part	Gate Type	Mounting Type	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Input Type	Driven Configuration	Channel Type	Operating Temperature [Max]	Operating Temperature [Min]	Number of Drivers	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case [y]	Package / Case [x]	Voltage - Supply [Max]	Voltage - Supply [Min]	Package / Case	Package / Case
STMicroelectronics L6384ED013TR	IGBT N-Channel MOSFET	Surface Mount	600 V	1.5 V 3.6 V	30 ns	50 ns	8-SOIC	Inverting	Half-Bridge	Synchronous	125 ¯C	-45 °C	2	400 mA	650 mA	8-SOIC	3.9 mm	0.154 in	16.6 V	14.6 V
STMicroelectronics L6384E	IGBT N-Channel MOSFET	Through Hole	600 V	1.5 V 3.6 V	30 ns	50 ns	8-DIP	Inverting	Half-Bridge	Synchronous	125 ¯C	-45 °C	2	400 mA	650 mA	8-DIP			16.6 V	14.6 V	0.3 in	7.62 mm
STMicroelectronics L6384ED	IGBT N-Channel MOSFET	Surface Mount	600 V	1.5 V 3.6 V	30 ns	50 ns	8-SOIC	Inverting	Half-Bridge	Synchronous	125 ¯C	-45 °C	2	400 mA	650 mA	8-SOIC	3.9 mm	0.154 in	16.6 V	14.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

L6384E Series

The L6384E is a high voltage gate driver, manufactured with the BCD™ "offline" technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to single input configuration. Further prevention from outputs cross conduction is guaranteed by the deadtime function, tunable by the user through an external resistor connected to the DT/SD pin.

The L6384E device has one input pin, one enable pin (DT/SD) and two output pins, and guarantees matched delays between low-side and high-side sections, thus simplifying device's high frequency operation. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution.

The L6384E features the UVLO protection and a voltage clamp on the VCCsupply voltage. The voltage clamp is typically around 15.6 V and is useful in order to ensure a correct device functioning in cases where VCCsupply voltage is ramped up too slowly or is subject to voltage drops.

Documents

Technical documentation and resources