IPS06N03LA G

Obsolete

Infineon Technologies

MOSFET N-CH 25V 50A TO251-3

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Obsolete

Infineon Technologies

MOSFET N-CH 25V 50A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPS06N03LA G

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	2653 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	5.9 mOhm
Supplier Device Package	PG-TO251-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case
Infineon Technologies IPS06N03LA G	Through Hole	4.5 V 10 V	PG-TO251-3-11	-55 °C	175 ░C	20 V	N-Channel	2653 pF	5.9 mOhm	22 nC	50 A	2 V	MOSFET (Metal Oxide)	25 V	83 W	TO-251-3 Stub Leads IPAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 25 V 50A (Tc) 83W (Tc) Through Hole PG-TO251-3-11

Technical documentation and resources