ZVN2106A

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Diodes Inc

POWER MOSFET, N CHANNEL, 60 V, 450 MA, 2 OHM, TO-226AA, THROUGH HOLE

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Diodes Inc

POWER MOSFET, N CHANNEL, 60 V, 450 MA, 2 OHM, TO-226AA, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	ZVN2106A

Current - Continuous Drain (Id) @ 25°C	450 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	75 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

N-Channel Enhancement Mode Vertical DMOS FET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)
Diodes Inc ZVN2106A	-55 °C	150 °C	2 Ohm	MOSFET (Metal Oxide)	N-Channel	Through Hole	60 V	700 mW	TO-226-3 TO-92-3	75 pF	TO-92	450 mA	10 V	2.4 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Enhancement Mode Vertical DMOS FET

Technical documentation and resources