STD8NF25
ActivePOWER MOSFET, N CHANNEL, 250 V, 8 A, 0.318 OHM, TO-252 (DPAK), SURFACE MOUNT
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STD8NF25
ActivePOWER MOSFET, N CHANNEL, 250 V, 8 A, 0.318 OHM, TO-252 (DPAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD8NF25 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 16 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 72 W |
| Rds On (Max) @ Id, Vgs [Max] | 420 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 2500 | $ 0.31 | |
| Digikey | Cut Tape (CT) | 1 | $ 0.87 | |
| 10 | $ 0.75 | |||
| 100 | $ 0.52 | |||
| 500 | $ 0.44 | |||
| 1000 | $ 0.37 | |||
| Digi-Reel® | 1 | $ 0.87 | ||
| 10 | $ 0.75 | |||
| 100 | $ 0.52 | |||
| 500 | $ 0.44 | |||
| 1000 | $ 0.37 | |||
| Tape & Reel (TR) | 2500 | $ 0.33 | ||
| 5000 | $ 0.31 | |||
| 12500 | $ 0.29 | |||
| 25000 | $ 0.29 | |||
| Newark | Each | 1 | $ 1.44 | |
| 10 | $ 0.96 | |||
| 100 | $ 0.69 | |||
| 500 | $ 0.57 | |||
| 1000 | $ 0.53 | |||
| 2500 | $ 0.48 | |||
| 10000 | $ 0.44 | |||
Description
General part information
STD8NF25 Series
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.100% avalanche tested175 °C junction temperature
Documents
Technical documentation and resources