TQM076NH04DCR RLG

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 15A/40A 8PDFNU

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Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 15A/40A 8PDFNU

Technical Specifications

Parameters and characteristics for this part

Specification	TQM076NH04DCR RLG

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	40 A, 15 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	29 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1850 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max [Max]	55.6 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.6 mOhm
Supplier Device Package	8-PDFNU (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.6 V

Part	Mounting Type	Supplier Device Package	Package / Case	Grade	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Configuration	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]
Taiwan Semiconductor Corporation TQM076NH04DCR RLG	Surface Mount	8-PDFNU (5x6)	8-PowerTDFN	Automotive	AEC-Q101	1850 pF	29 nC	55.6 W	7.6 mOhm	2 N-Channel (Dual)	15 A 40 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	3.6 V	40 V
Taiwan Semiconductor Corporation TQM076NH04LDCR RLG	Surface Mount	8-PDFN (5x6)	8-PowerTDFN	Automotive	AEC-Q101			55.6 W	7.6 mOhm	2 N-Channel	15 A 40 A	MOSFET (Metal Oxide)	-55 °C	175 ░C		40 V	2006 pF	34 nC	2.2 V

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General part information

Mosfet Array 40V 15A (Ta), 40A (Tc) 55.6W (Tc) Surface Mount 8-PDFNU (5x6)

Technical documentation and resources