HN1C03FU-A(TE85L,F

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Toshiba Semiconductor and Storage

TRANS 2NPN 20V 0.3A US6

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Toshiba Semiconductor and Storage

TRANS 2NPN 20V 0.3A US6

Technical Specifications

Parameters and characteristics for this part

Specification	HN1C03FU-A(TE85L,F

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	30 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Supplier Device Package	US6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic [Max]	100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

Part	Vce Saturation (Max) @ Ib, Ic [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	Mounting Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package
Toshiba Semiconductor and Storage HN1C03FU-A(TE85L,F	100 mV	200	100 nA	2 NPN (Dual)	30 MHz	300 mA	6-TSSOP SC-88 SOT-363	200 mW	Surface Mount	150 °C	20 V	US6
Toshiba Semiconductor and Storage HN1C03F-B(TE85L,F)	100 mV	350	100 nA	2 NPN (Dual)	30 MHz	300 mA	SC-74 SOT-457	300 mW	Surface Mount	150 °C	20 V	SM6

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General part information

Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 200mW Surface Mount US6

Technical documentation and resources