FZT955TA

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Diodes Inc

TRANS GP BJT PNP 140V 4A 3000MW 4-PIN(3+TAB) SOT-223 T/R

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Active

Diodes Inc

TRANS GP BJT PNP 140V 4A 3000MW 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	FZT955TA

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	110 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	3 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	370 mV
Voltage - Collector Emitter Breakdown (Max)	140 V

Part	Transistor Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type
Diodes Inc FZT955TA	PNP	3 W	4 A	140 V	110 MHz	TO-261-4 TO-261AA	370 mV	100 hFE	SOT-223-3	-55 °C	150 °C	50 nA	Surface Mount
Diodes Inc FZT955TC	PNP	3 W	4 A	140 V	110 MHz	TO-261-4 TO-261AA	370 mV	100 hFE	SOT-223-3	-55 °C	150 °C	50 nA	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 140 V 4 A 110MHz 3 W Surface Mount SOT-223-3

Technical documentation and resources