RGE60TS65DGC13
ObsoleteRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 30A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
RGE60TS65DGC13
ObsoleteRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 30A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
Description
General part information
RGE60TS65DG Series
RGE60TS65DG is IGBT featuring low switching loss and low conduction loss. It is ideal for Power Conditioner and Welder and General Inverter and UPS
Technical Specifications
Parameters and characteristics for this part
| Specification | RGE60TS65DGC13 |
|---|---|
| Current - Collector (Ic) (Max) | 51 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Gate Charge | 63 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247GE |
| Power - Max | 166 W |
| Reverse Recovery Time (trr) | 166 ns |
| Switching Energy (Off) | 570 µJ |
| Switching Energy (On) | 640 µJ |
| Td (off) @ 25°C | 114 ns |
| Td (on) @ 25°C | 40 ns |
| Test Condition Current | 30 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.05 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Compliance of the ELV directive
Two-Resistor Model for Thermal Simulation
How to Use LTspice® Models: Tips for Improving Convergence
Precautions When Measuring the Rear of the Package with a Thermocouple
PCB Layout Thermal Design Guide
Importance of Probe Calibration When Measuring Power: Deskew
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Impedance Characteristics of Bypass Capacitor
Notes for Calculating Power Consumption:Static Operation
About Flammability of Materials
About Export Administration Regulations (EAR)
Precautions for Thermal Resistance of Insulation Sheet
Moisture Sensitivity Level
Notes for Temperature Measurement Using Forward Voltage of PN Junction
4 Steps for Successful Thermal Designing of Power Devices
What Is Thermal Design
θ<sub>JC</sub> and Ψ<sub>JT</sub>
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
Anti-Whisker formation
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Measurement Method and Usage of Thermal Resistance RthJC
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
What is a Thermal Model? (IGBT)
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Notes for Temperature Measurement Using Thermocouples
Method for Monitoring Switching Waveform
Types and Features of Transistors
Basics of Thermal Resistance and Heat Dissipation
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
RGE60TS65DG Data Sheet
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
Part Explanation
How to Use LTspice® Models
Judgment Criteria of Thermal Evaluation
Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules
Package Dimensions - TO-247GE
Estimation of switching losses in IGBTs operating with resistive load
Calculation of Power Dissipation in Switching Circuit
How to Use the Thermal Resistance and Thermal Characteristics Parameters