MJD32CQ-13

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Diodes Inc

TRANS GP BJT PNP 100V 3A 3-PIN TO-252 T/R

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Diodes Inc

TRANS GP BJT PNP 100V 3A 3-PIN TO-252 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	MJD32CQ-13

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 hFE
Frequency - Transition	3 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	15 W
Qualification	AEC-Q101
Supplier Device Package	TO-252-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NRND = Not Recommended for New Design

Part	Mounting Type	Frequency - Transition	Transistor Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Qualification	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Grade	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max) [Max]
Diodes Inc MJD32CQ-13	Surface Mount	3 MHz	PNP	1 µA	1.2 V	AEC-Q101	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	-55 °C	150 °C	15 W	Automotive	TO-252-3	10 hFE	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NRND = Not Recommended for New Design

Technical documentation and resources