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FERD40H100STS - TO-220-3

FERD40H100STS

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STMicroelectronics

100 V, 40 A FIELD-EFFECT RECTIFIER DIODE (FERD)

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FERD40H100STS - TO-220-3

FERD40H100STS

Active
STMicroelectronics

100 V, 40 A FIELD-EFFECT RECTIFIER DIODE (FERD)

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Technical Specifications

Parameters and characteristics for this part

SpecificationFERD40H100STS
Current - Average Rectified (Io)40 A
Current - Reverse Leakage @ Vr190 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-220-3
Speed200 mA, 500 ns
Supplier Device PackageTO-220AB
TechnologyFERD (Field Effect Rectifier Diode)
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If705 mV

FERD40H100S Series

100 V, 40 A Field-Effect Rectifier Diode (FERD)

PartDiode ConfigurationCurrent - Average Rectified (Io) (per Diode)Operating Temperature - JunctionSpeedVoltage - Forward (Vf) (Max) @ IfCurrent - Reverse Leakage @ VrSupplier Device PackagePackage / CaseVoltage - DC Reverse (Vr) (Max) [Max]TechnologyMounting TypeOperating Temperature - Junction [Max]Current - Average Rectified (Io)Speed
STMicroelectronics
1 Pair Common Cathode
20 A
150 °C
No Recovery Time
545 mV
1.1 mA
TO-220
TO-220-3
60 V
FERD (Field Effect Rectifier Diode)
Through Hole
STMicroelectronics
705 mV
190 µA
TO-220AB
TO-220-3
100 V
FERD (Field Effect Rectifier Diode)
Through Hole
175 °C
40 A
200 mA
500 ns
STMicroelectronics
1 Pair Common Cathode
20 A
No Recovery Time
490 mV
800 µA
TO-220FPAB
TO-220-3 Full Pack
50 V
FERD (Field Effect Rectifier Diode)
Through Hole
175 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.40
50$ 1.13
100$ 0.89
500$ 0.76
1000$ 0.62
2000$ 0.58
5000$ 0.55
10000$ 0.53
NewarkEach 1$ 2.20
10$ 1.17
100$ 1.14
500$ 0.98
1000$ 0.94
3000$ 0.89
10000$ 0.82

Description

General part information

FERD40H100S Series

This single rectifier is based on a proprietary technology, enabling to achieve the best in class VF/IRfor a given silicon surface.

Packaged in TO-220AB, TO-220FPAB and D2PAK, the FERD40H100S is optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers.