DMT10H032LDVW-7
ActiveDiodes Inc
100V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMT10H032LDVW-7
ActiveDiodes Inc
100V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMT10H032LDVW-7 |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 11.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 683 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 1.2 W |
| Rds On (Max) @ Id, Vgs | 32 mOhm |
| Supplier Device Package | PowerDI3333-8 (SWP) (Type UXD) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 0.37 | |
| 4000 | $ 0.35 | |||
| 6000 | $ 0.33 | |||
| 10000 | $ 0.32 | |||
| 14000 | $ 0.31 | |||
| 20000 | $ 0.30 | |||
Description
General part information
DMT10H032LDVW Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources