TK17E65W,S1X

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 17.3A TO220

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 17.3A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TK17E65W,S1X

Current - Continuous Drain (Id) @ 25°C	17.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	165 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.5 V

Part	Technology	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage TK17E65W,S1X	MOSFET (Metal Oxide)	N-Channel	200 mOhm	30 V	650 V	1800 pF	10 V	165 W	TO-220-3	Through Hole	17.3 A	TO-220	3.5 V	150 °C	45 nC

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General part information

N-Channel 650 V 17.3A (Ta) 165W (Tc) Through Hole TO-220

Technical documentation and resources