STW19NM65N

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STMicroelectronics

MOSFET N-CH 650V 15.5A TO247-3

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STMicroelectronics

MOSFET N-CH 650V 15.5A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW19NM65N

Current - Continuous Drain (Id) @ 25°C	15.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 650V 15.5A TO247-3

Part	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature	Vgs (Max)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STW19NM65N	Through Hole	N-Channel	55 nC	150 W	4 V	15.5 A	270 mOhm	10 V	650 V	TO-247-3	150 °C	25 V	TO-247-3	MOSFET (Metal Oxide)	1900 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 15.5A (Tc) 150W (Tc) Through Hole TO-247-3

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