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SUP40N10-30-GE3 - TO-220AB

SUP40N10-30-GE3

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 38.5A TO220AB

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SUP40N10-30-GE3 - TO-220AB

SUP40N10-30-GE3

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 38.5A TO220AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSUP40N10-30-GE3
Current - Continuous Drain (Id) @ 25°C38.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]60 nC
Input Capacitance (Ciss) (Max) @ Vds2400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)3.1 W, 89 W
Rds On (Max) @ Id, Vgs30 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SUP40 Series

N-Channel 100 V 38.5A (Tc) 3.1W (Ta), 89W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources

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