STGY80H65DFB

Obsolete

STMicroelectronics

469W 120A 650V FS(FIELD STOP) TO-247-3 IGBT TRANSISTORS / MODULES ROHS

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Obsolete

STMicroelectronics

469W 120A 650V FS(FIELD STOP) TO-247-3 IGBT TRANSISTORS / MODULES ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	STGY80H65DFB

Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	414 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	469 W
Reverse Recovery Time (trr)	85 ns
Supplier Device Package	MAX247™
Switching Energy	2.1 mJ, 1.5 mJ
Td (on/off) @ 25°C	280 ns, 84 ns
Test Condition	10 Ohm, 400 V, 15 V, 80 A
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Gate Charge	Current - Collector (Ic) (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Reverse Recovery Time (trr)	IGBT Type	Power - Max [Max]	Switching Energy	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Test Condition
STMicroelectronics STGY80H65DFB	414 nC	120 A	-55 °C	175 ░C	Through Hole	TO-247-3	MAX247™	650 V	85 ns	Trench Field Stop	469 W	1.5 mJ 2.1 mJ	240 A	2 V	84 ns 280 ns	10 Ohm 15 V 80 A 400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 120 A 469 W Through Hole MAX247™

Technical documentation and resources

No documents available