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STE70NM60

STE70NM60

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STMicroelectronics

N-CHANNEL 600V - 0.05 OHM - 70A - ISOTOP ZENER-PROTECTED MDMESH(TM) POWER MOSFET

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STE70NM60

STE70NM60

Active
STMicroelectronics

N-CHANNEL 600V - 0.05 OHM - 70A - ISOTOP ZENER-PROTECTED MDMESH(TM) POWER MOSFET

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Description

General part information

STE70NM60 Series

The MDmesh™is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTE70NM60
Current - Continuous Drain (Id) (Tc)70 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)266 nC
Input Capacitance (Ciss) (Max)7300 pF
Mounting TypeChassis Mount
Operating Temperature150 °C
Package / CaseISOTOP
Package NameISOTOP®
Power Dissipation (Max)600 W
Rds On (Max)55 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)5 V

Pricing

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CAD

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