STD4N80K5

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STMicroelectronics

N-CHANNEL 800 V, 2.1 OHM TYP., 3 A MDMESH K5 POWER MOSFET IN DPAK PACKAGE

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STD4N80K5

Active

STMicroelectronics

N-CHANNEL 800 V, 2.1 OHM TYP., 3 A MDMESH K5 POWER MOSFET IN DPAK PACKAGE

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Description Specifications Series Pricing CAD Documents

Description

General part information

STD4N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Technical Specifications

Parameters and characteristics for this part

Specification	STD4N80K5

Current - Continuous Drain (Id) (Tc)	3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	10.5 nC
Input Capacitance (Ciss) (Max)	175 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	60 W
Rds On (Max)	2.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

STD4N80K5 Series

N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in DPAK package

Part	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Vgs (Max)	Package Name
STMicroelectronics STD4N80K5	Surface Mount	800 V	10.5 nC	60 W	3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	10 V	175 pF	2.5 Ohm	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	30 V	DPak