CY7C109D-10VXI

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Infineon Technologies

SRAM, ASYNCHRONOUS SRAM, 1 MBIT, 128K X 8BIT, SOJ, 32 PINS, 4.5 V

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Infineon Technologies

SRAM, ASYNCHRONOUS SRAM, 1 MBIT, 128K X 8BIT, SOJ, 32 PINS, 4.5 V

Technical Specifications

Parameters and characteristics for this part

Part	Memory Format	Technology	Supplier Device Package	Access Time	Package / Case	Package / Case	Package / Case	Memory Interface	Memory Size	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Memory Type	Write Cycle Time - Word, Page	Memory Organization	Package / Case
Infineon Technologies CY7C109BN-15ZXCT	SRAM	SRAM - Asynchronous	32-TSOP I	15 ns	0.724 in	18.4 mm	32-TFSOP	Parallel	1 Mbit	70 °C	0 °C	4.5 V	5.5 V	Surface Mount	Volatile	15 ns	128K x 8
Infineon Technologies CY7C109B-12ZXCT	SRAM	SRAM - Asynchronous	32-TSOP I	12 ns	0.724 in	18.4 mm	32-TFSOP	Parallel	1 Mbit	70 °C	0 °C	4.5 V	5.5 V	Surface Mount	Volatile	12 ns	128K x 8
Infineon Technologies CY7C109BN-20ZXCT	SRAM	SRAM - Asynchronous	32-TSOP I	20 ns	0.724 in	18.4 mm	32-TFSOP	Parallel	1 Mbit	70 °C	0 °C	4.5 V	5.5 V	Surface Mount	Volatile	20 ns	128K x 8
Infineon Technologies CY7C109D-10VXI	SRAM	SRAM - Asynchronous	32-SOJ	10 ns		10.16 mm	32-BSOJ	Parallel	1 Mbit	85 °C	-40 °C	4.5 V	5.5 V	Surface Mount	Volatile	10 ns	128K x 8	10.16 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

SRAM - Asynchronous Memory IC 1Mbit Parallel 10 ns 32-SOJ

Technical documentation and resources