IXFN170N10

IXYS

MOSFET N-CH 100V 170A SOT-227B

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IXYS

MOSFET N-CH 100V 170A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN170N10

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	515 nC
Input Capacitance (Ciss) (Max) @ Vds	10300 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	600 W
Rds On (Max) @ Id, Vgs [Max]	10 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXFN170N10	100 V	SOT-227-4 miniBLOC	600 W	SOT-227B	MOSFET (Metal Oxide)	515 nC	10 V	20 V	N-Channel	10300 pF	4 V	Chassis Mount	10 mOhm	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	10	$ 32.54

General part information

N-Channel 100 V 170A (Tc) 600W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available