STF3LN62K3

Obsolete

STMicroelectronics

MOSFET N-CH 620V 2.5A TO220FP

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Obsolete

STMicroelectronics

MOSFET N-CH 620V 2.5A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STF3LN62K3

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	386 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max)	Technology	Operating Temperature	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
STMicroelectronics STF3LN62K3	Through Hole	N-Channel	10 V	30 V	620 V	4.5 V	17 nC	TO-220FP	20 W	MOSFET (Metal Oxide)	150 °C	3 Ohm	2.5 A	386 pF	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 620 V 2.5A (Tc) 20W (Tc) Through Hole TO-220FP

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