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BGS18MA12E6327XTSA1 - ATSLP-12-4

BGS18MA12E6327XTSA1

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Infineon Technologies

RF SWITCH, 6GHZ, -40 TO 85DEG C ROHS COMPLIANT: YES

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BGS18MA12E6327XTSA1 - ATSLP-12-4

BGS18MA12E6327XTSA1

Active
Infineon Technologies

RF SWITCH, 6GHZ, -40 TO 85DEG C ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBGS18MA12E6327XTSA1
FeaturesDC Blocked
Frequency Range [Max]6 GHz
Frequency Range [Min]100 MHz
Impedance50 Ohms
Insertion Loss1.2 dB
Isolation26 dB
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case12-UFQFN Exposed Pad
RF TypeLTE, W-CDMA
Supplier Device PackageATSLP-12-10
Test Frequency6 GHz
Voltage - Supply [Max]1.95 V
Voltage - Supply [Min]1.65 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.72
10$ 0.63
25$ 0.59
100$ 0.49
250$ 0.45
500$ 0.38
1000$ 0.31
Digi-Reel® 1$ 0.72
10$ 0.63
25$ 0.59
100$ 0.49
250$ 0.45
500$ 0.38
1000$ 0.31
Tape & Reel (TR) 4500$ 0.28
9000$ 0.26
13500$ 0.25
31500$ 0.24
NewarkEach (Supplied on Cut Tape) 1$ 0.51
10$ 0.40
25$ 0.37
50$ 0.35
100$ 0.32
250$ 0.32
500$ 0.31
1000$ 0.30

Description

General part information

BGS18MA12 Series

MIPI 2.0 SP8T switch for LTE diversity, Tx and LAA applications This SP8T RF switch is a perfect solution for multimode handsets based on LTE, WCDMA and TDCDMA. It is based on Infineon’s proprietary technology and has excellent RF performance. The ultra-low insertion loss helps customers to achieve high system sensitivity, the coverage of LTE Tx power and 6 GHz enables very broad application. It features DC-free RF ports, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Its on-chip MIPI RFFE 2.0 controller is fully compatible with industry standard.

Documents

Technical documentation and resources

No documents available