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R6530KNX3C16

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Rohm Semiconductor

650V 30A, TO-220AB, HIGH-SPEED SWITCHING POWER MOSFET

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Product thumbnail image

R6530KNX3C16

Active
Rohm Semiconductor

650V 30A, TO-220AB, HIGH-SPEED SWITCHING POWER MOSFET

Find alt

Description

General part information

R6530 Series

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Technical Specifications

Parameters and characteristics for this part

SpecificationR6530KNX3C16
Current - Continuous Drain (Id) (Tc)30 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)56 nC
Input Capacitance (Ciss) (Max)2350 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Package NameTO-220AB
Power Dissipation (Max)307 W
Rds On (Max)140 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

R6530KNX3 ESD Data
Notes for Calculating Power Consumption:Static Operation
MOSFET Gate Resistor Setting for Motor Driving
Condition of Soldering / Land Pattern Reference
Part Explanation
How to Use LTspice® Models
Temperature derating method for Safe Operating Area (SOA)
Two-Resistor Model for Thermal Simulation
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
PCB Layout Thermal Design Guide
How to Use LTspice® Models: Tips for Improving Convergence
Impedance Characteristics of Bypass Capacitor
R6530KNX3 Data Sheet
Basics of Thermal Resistance and Heat Dissipation
Anti-Whisker formation - Transistors
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Types and Features of Transistors
TO-220AB Dimension
TO-220AB Reliability Test Result
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Moisture Sensitivity Level - Transistors
About Flammability of Materials
MOSFET Gate Drive Current Setting for Motor Driving
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
TO-220AB Packing Information
TO-220AB Inner Structure
Compliance of the RoHS directive
Report of SVHC under REACH Regulation
Judgment Criteria of Thermal Evaluation
List of Transistor Package Thermal Resistance
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
TO-220AB Explanation for Marking
Notes for Temperature Measurement Using Forward Voltage of PN Junction
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Precautions When Measuring the Rear of the Package with a Thermocouple
Method for Monitoring Switching Waveform
What Is Thermal Design
Measurement Method and Usage of Thermal Resistance RthJC
Notes for Temperature Measurement Using Thermocouples
About Export Regulations
Importance of Probe Calibration When Measuring Power: Deskew
What is a Thermal Model? (Transistor)
Calculation of Power Dissipation in Switching Circuit
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup