IRLZ34NSTRLPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 30 A, 0.035 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 30 A, 0.035 OHM, TO-263 (D2PAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRLZ34NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	880 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	68 W, 3.8 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Mounting Type	Vgs (Max)	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Infineon Technologies IRLZ34NSTRLPBF	30 A	2 V	55 V	MOSFET (Metal Oxide)	880 pF	D2PAK	Surface Mount	16 V	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	35 mOhm	3.8 W 68 W	25 nC	-55 °C	175 ░C	4 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Technical documentation and resources