BSP92P E6327

Obsolete

Infineon Technologies

MOSFET P-CH 250V 260MA SOT223-4

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Obsolete

Infineon Technologies

MOSFET P-CH 250V 260MA SOT223-4

Technical Specifications

Parameters and characteristics for this part

Specification	BSP92P E6327

Current - Continuous Drain (Id) @ 25°C	260 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	2.8 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.4 nC
Input Capacitance (Ciss) (Max) @ Vds	104 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies BSP92P E6327	2.8 V 10 V	PG-SOT223-4	20 V	2 V	P-Channel	12 Ohm	TO-261-4 TO-261AA	-55 °C	150 °C	1.8 W	260 mA	250 V	Surface Mount	5.4 nC	MOSFET (Metal Oxide)	104 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 250 V 260mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

Technical documentation and resources