IXFX73N30Q

Obsolete

IXYS

MOSFET N-CH 300V 73A PLUS247-3

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Obsolete

IXYS

MOSFET N-CH 300V 73A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX73N30Q

Current - Continuous Drain (Id) @ 25°C	73 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	195 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	500 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology
IXYS IXFX73N30Q	PLUS247™-3	5400 pF	195 nC	N-Channel	500 W	-55 °C	150 °C	300 V	30 V	45 mOhm	4 V	Through Hole	73 A	10 V	TO-247-3 Variant	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 300 V 73A (Tc) 500W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

No documents available