STV300NH02L

Obsolete

STMicroelectronics

TRANS MOSFET N-CH 24V 200A 10-PIN(10+2TAB) POWERSO T/R

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STV300NH02L

Obsolete

STMicroelectronics

TRANS MOSFET N-CH 24V 200A 10-PIN(10+2TAB) POWERSO T/R

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STV300NH02L

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	24 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	109 nC
Input Capacitance (Ciss) (Max) @ Vds	7055 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerSO-10 Exposed Bottom Pad
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	1 mOhm
Supplier Device Package	10-PowerSO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

STV300 Series

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Package / Case
STMicroelectronics STV300NH02L	200 A	-55 °C	175 ░C	MOSFET (Metal Oxide)	7055 pF	10 V	5 V	300 W	10-PowerSO	2 V	N-Channel	1 mOhm	Surface Mount	24 V	20 V	109 nC	PowerSO-10 Exposed Bottom Pad

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STV300 Series

This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique "single feature size" strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.RDS(on)*Qgindustry’s benchmarkConduction losses reducedLow profile, very low parasitic inductanceSwitching losses reduced

Documents

Technical documentation and resources

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