IPB044N15N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 4.4 MOHM;
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IPB044N15N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 150 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 4.4 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB044N15N5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 174 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 100 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 4.4 mOhm |
| Supplier Device Package | PG-TO263-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB044 Series
The OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in RDS(on)(up to 25% compared to the next best alternative in SuperSO8) and Qrrwithout compromising FOMgdand FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Qrr= 26 nC in SuperSO8) increases commutation ruggedness.
Documents
Technical documentation and resources