WI62120

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Wise-Integration

GANFET 650V 13A 14QFN

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Active

Wise-Integration

GANFET 650V 13A 14QFN

Technical Specifications

Parameters and characteristics for this part

Specification	WI62120

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs [Max]	2.75 nC
Input Capacitance (Ciss) (Max) @ Vds	92.7 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-PowerLDFN
Supplier Device Package	14-PQFN (6x8)
Technology	GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id	2.2 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]
Wise-Integration WI62120	14-PQFN (6x8)	2.75 nC	GaNFET (Gallium Nitride)	92.7 pF	Surface Mount	650 V	13 A	14-PowerLDFN	2.2 V	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 650V 13A Surface Mount 14-PQFN (6x8)

Technical documentation and resources