IPS60R2K1CEAKMA1

Obsolete

Infineon Technologies

CONSUMER

Search across all available documentation for this part.

Obsolete

Infineon Technologies

CONSUMER

Technical Specifications

Parameters and characteristics for this part

Specification	IPS60R2K1CEAKMA1

Current - Continuous Drain (Id) @ 25°C	3.7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.7 nC
Input Capacitance (Ciss) (Max) @ Vds	140 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	2.1 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Technology	Supplier Device Package	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IPS60R2K1CEAKMA1	6.7 nC	10 V	IPAK TO-251-3 Short Leads TO-251AA	3.7 A	600 V	2.1 Ohm	3.5 V	Through Hole	20 V	MOSFET (Metal Oxide)	PG-TO251-3	N-Channel	150 °C	-40 °C	38 W	140 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 3.7A (Tj) 38W (Tc) Through Hole PG-TO251-3

Technical documentation and resources