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FF8MR12W1M1HB11BPSA1 - INFINEON FS33MR12W1M1HB70BPSA1

FF8MR12W1M1HB11BPSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 90 A, 1.2 KV, 0.0081 OHM, MODULE

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Search across all available documentation for this part.

DocumentsFF8MR12W1M1H_B11CoolSiC™ MOSFET M1H for 1200 V and 2000 V modules+3
FF8MR12W1M1HB11BPSA1 - INFINEON FS33MR12W1M1HB70BPSA1

FF8MR12W1M1HB11BPSA1

Active
Infineon Technologies

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 90 A, 1.2 KV, 0.0081 OHM, MODULE

Deep-Dive with AI

DocumentsFF8MR12W1M1H_B11CoolSiC™ MOSFET M1H for 1200 V and 2000 V modules+3

Technical Specifications

Parameters and characteristics for this part

SpecificationFF8MR12W1M1HB11BPSA1
Drain to Source Voltage (Vdss)1200 V
Drain to Source Voltage (Vdss)1.2 kV
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageAG-EASY1B
TechnologySilicon Carbide (SiC)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 102.38
24$ 85.03
NewarkEach 1$ 106.48
5$ 100.46
10$ 94.44
48$ 88.43

Description

General part information

FF8MR12 Series

EasyDUAL™ 1BCoolSiC™ MOSFEThalf-bridge module 1200 V, 8 mΩ G1 with integrated NTC temperature sensor andPressFIT Contact Technology.