G33N03D3

Active

MOSFET 2N-CH 30V 30A 8DFN

Active

MOSFET 2N-CH 30V 30A 8DFN

Description

General part information

Mosfet Array 30V 28A (Tc) 13W (Tc) Surface Mount 8-DFN (3x3)

Parameters and characteristics for this part

Specification	G33N03D3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	28 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	15 nC, 16 nC
Input Capacitance (Ciss) (Max)	837 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerVDFN
Package Length	3 mm
Package Name	8-DFN
Package Width	3 mm
Power - Max (Tc)	13 W
Rds On (Max)	11 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Package Width	Package Name	Package Length	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Channel Count	Configuration	Configuration - Features	Rds On (Max)	Mounting Type	Power - Max (Tc)	Technology	Input Capacitance (Ciss) (Max)	Package / Case
Goford Semiconductor G33N03D3	3 mm	8-DFN	3 mm	15 nC 16 nC	30 V	28 A	2.5 V	-55 °C	150 °C	2	N-Channel	Dual	11 mOhm	Surface Mount	13 W	MOSFET (Metal Oxide)	837 pF	8-PowerVDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources