STGD6NC60HDT4
ActiveSTMicroelectronics
TRANS IGBT CHIP N-CH 600V 15A 3-PIN(2+TAB) DPAK T/R
STGD6NC60HDT4
ActiveSTMicroelectronics
TRANS IGBT CHIP N-CH 600V 15A 3-PIN(2+TAB) DPAK T/R
Description
General part information
STGD6NC60HDT4 Series
This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | STGD6NC60HDT4 |
|---|---|
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Pulsed (Icm) | 21 A |
| Gate Charge | 13.6 nC |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power - Max | 56 VA |
| Reverse Recovery Time (trr) | 21 ns |
| Switching Energy (Off) | 68 µJ |
| Switching Energy (On) | 20 µJ |
| Td (off) @ 25°C | 76 ns |
| Td (on) @ 25°C | 12 ns |
| Test Condition Current | 3 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 390 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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CAD
3D models and CAD resources for this part