BYT30PI-1000RG

Obsolete

STMicroelectronics

DIODE GEN PURP 1KV 30A DOP3I

Search across all available documentation for this part.

Obsolete

STMicroelectronics

DIODE GEN PURP 1KV 30A DOP3I

Technical Specifications

Parameters and characteristics for this part

Specification	BYT30PI-1000RG

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DOP3I-2 Insulated (Straight Leads)
Reverse Recovery Time (trr)	165 ns
Speed	200 mA, 500 ns
Supplier Device Package	DOP3I
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.9 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)
STMicroelectronics BYT30G-400-TR	400 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	D2PAK	1.5 V	Surface Mount	150 °C	-40 °C	200 mA 500 ns	30 A	35 µA
STMicroelectronics BYT30PI-1000RG	1000 V	DOP3I-2 Insulated (Straight Leads)	Standard	DOP3I	1.9 V	Through Hole	150 °C	-40 °C	200 mA 500 ns	30 A	100 µA	165 ns
STMicroelectronics BYT30P-400	400 V	SOD-93-2	Standard	SOD-93-2	1.5 V	Through Hole	150 °C	-40 °C	200 mA 500 ns	30 A	35 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1000 V 30A Through Hole DOP3I

Technical documentation and resources