AOT66916L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 35.5/120A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 35.5/120A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT66916L

Current - Continuous Drain (Id) @ 25°C	120 A
Current - Continuous Drain (Id) @ 25°C	35.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	6180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	8.3 W, 277 W
Rds On (Max) @ Id, Vgs	3.6 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)
Alpha & Omega Semiconductor Inc. AOT66916L	8.3 W 277 W	120 A	35.5 A	6 V 10 V	6180 pF	-55 °C	150 °C	TO-220-3	Through Hole	100 V	N-Channel	TO-220	78 nC	MOSFET (Metal Oxide)	3.6 mOhm	3.5 V	20 V

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General part information

N-Channel 100 V 35.5A (Ta), 120A (Tc) 8.3W (Ta), 277W (Tc) Through Hole TO-220

Technical documentation and resources