TSM2328CX

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Taiwan Semiconductor Corporation

100V, 1.5A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

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Taiwan Semiconductor Corporation

100V, 1.5A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS

Technical Specifications

Parameters and characteristics for this part

Specification	TSM2328CX

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.1 nC
Input Capacitance (Ciss) (Max) @ Vds	975 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.38 W
Rds On (Max) @ Id, Vgs	250 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Operating Temperature	Technology	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Taiwan Semiconductor Corporation TSM2328CX	Surface Mount	150 °C	MOSFET (Metal Oxide)	100 V	SC-59 SOT-23-3 TO-236-3	2.5 V	1.38 W	250 mOhm	11.1 nC	1.5 A	10 V	N-Channel	20 V	SOT-23	975 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	144000	$ 0.39

General part information

N-Channel 100 V 1.5A (Ta) 1.38W (Ta) Surface Mount SOT-23

Technical documentation and resources