IXFV22N50P

Obsolete

IXYS

MOSFET N-CH 500V 22A PLUS220

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Obsolete

IXYS

MOSFET N-CH 500V 22A PLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFV22N50P

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2630 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max)	350 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	PLUS220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	FET Type	Technology	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case
IXYS IXFV22N50P	N-Channel	MOSFET (Metal Oxide)	350 W	270 mOhm	10 V	2630 pF	50 nC	Through Hole	-55 °C	150 °C	PLUS220	22 A	500 V	30 V	5.5 V	TO-220-3 Short Tab
IXYS IXFV22N50PS	N-Channel	MOSFET (Metal Oxide)	350 W	270 mOhm	10 V	2630 pF	50 nC	Surface Mount	-55 °C	150 °C	PLUS-220SMD	22 A	500 V	30 V	5.5 V	PLUS-220SMD

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 22A (Tc) 350W (Tc) Through Hole PLUS220

Technical documentation and resources

No documents available