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DMT2005UDV-13 - PowerDI3333-8

DMT2005UDV-13

Active
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

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DMT2005UDV-13 - PowerDI3333-8

DMT2005UDV-13

Active
Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT2005UDV-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)24 V
Gate Charge (Qg) (Max) @ Vgs46.7 nC
Input Capacitance (Ciss) (Max) @ Vds2060 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max [Max]900 mW
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackagePowerDI3333-8 (Type UXC)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.22
6000$ 0.21
9000$ 0.20
15000$ 0.19
21000$ 0.18

Description

General part information

DMT2005UDV (Not Recommended for New Design (NRND)) Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.