IGC54T65R3QEX1SA1

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Infineon Technologies

IGBT CHIP

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IGC54T65R3QEX1SA1

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Infineon Technologies

IGBT CHIP

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IGC54T65R3QEX1SA1

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	300 A
IGBT Type	Trench Field Stop
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Die
Supplier Device Package	Die
Vce(on) (Max) @ Vge, Ic	2.22 V
Voltage - Collector Emitter Breakdown (Max)	650 V

IGC54T65 Series

Part	Mounting Type	Current - Collector Pulsed (Icm)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic
Infineon Technologies IGC54T65R3QEX1SA1	Surface Mount	300 A	Die	-40 C	175 °C	100 A	Die	Trench Field Stop	650 V	2.22 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IGC54T65 Series

Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses.

Documents

Technical documentation and resources

No documents available