SPW20N60C3FKSA1

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Infineon Technologies

MOSFET N-CH 650V 20.7A TO247-3

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Infineon Technologies

MOSFET N-CH 650V 20.7A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPW20N60C3FKSA1

Current - Continuous Drain (Id) @ 25°C	20.7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	114 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs [Max]	190 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies SPW20N60C3FKSA1	N-Channel	PG-TO247-3-1	2400 pF	208 W	3.9 V	Through Hole	TO-247-3	114 nC	10 V	20 V	650 V	MOSFET (Metal Oxide)	190 mOhm	-55 °C	150 °C	20.7 A

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General part information

N-Channel 650 V 20.7A (Tc) 208W (Tc) Through Hole PG-TO247-3-1

Technical documentation and resources

No documents available