STF14NM65N

Obsolete

STMicroelectronics

MOSFET N-CH 650V 12A TO220FP

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STF14NM65N

Obsolete

STMicroelectronics

MOSFET N-CH 650V 12A TO220FP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF14NM65N

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STF14N80K5 Series

N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220FP package

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature
STMicroelectronics STF14N80K5	12 A	-55 °C	150 °C	30 V	800 V	MOSFET (Metal Oxide)	Through Hole	445 mOhm	N-Channel	5 V	TO-220-3 Full Pack	TO-220FP	620 pF	22 nC	10 V
STMicroelectronics STF14NM65N	12 A			25 V	650 V	MOSFET (Metal Oxide)	Through Hole	380 mOhm	N-Channel	4 V	TO-220-3 Full Pack	TO-220FP		45 nC	10 V	1300 pF	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STF14N80K5 Series

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Documents

Technical documentation and resources