AOT11C60PL

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO220

Search across all available documentation for this part.

Obsolete

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 11A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT11C60PL

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2333 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	298 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]
Alpha & Omega Semiconductor Inc. AOT11C60PL	600 V	420 mOhm	Through Hole	11 A	30 V	10 V	298 W	50 nC	TO-220	2333 pF	TO-220-3	MOSFET (Metal Oxide)	N-Channel	5 V	-55 °C	150 °C
Alpha & Omega Semiconductor Inc. AOT11N70	700 V		Through Hole	11 A	30 V	10 V	271 W	45 nC	TO-220		TO-220-3	MOSFET (Metal Oxide)	N-Channel	4.5 V	-55 °C	150 °C	870 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$