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STP35N60DM2

STP35N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.094 OHM TYP., 28 A MDMESH DM2 POWER MOSFETS IN TO-220 PACKAGE

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STP35N60DM2

STP35N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 0.094 OHM TYP., 28 A MDMESH DM2 POWER MOSFETS IN TO-220 PACKAGE

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Description

General part information

STP35N60DM2 Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP35N60DM2
Current - Continuous Drain (Id) (Tc)28 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)54 nC
Input Capacitance (Ciss) (Max)2400 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)210 W
Rds On (Max)110 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)5 V

Pricing

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CAD

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