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STF4N80K5 - STMICROELECTRONICS STF13N60DM2

STF4N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 2.1 OHM TYP., 3 A MDMESH K5 POWER MOSFET IN TO-220FP PACKAGE

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Search across all available documentation for this part.

DocumentsTN1378+15
STF4N80K5 - STMICROELECTRONICS STF13N60DM2

STF4N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 2.1 OHM TYP., 3 A MDMESH K5 POWER MOSFET IN TO-220FP PACKAGE

Deep-Dive with AI

DocumentsTN1378+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF4N80K5
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10.5 nC
Input Capacitance (Ciss) (Max) @ Vds175 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)20 W
Rds On (Max) @ Id, Vgs2.5 Ohm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 50$ 1.21
100$ 0.99
250$ 0.97
500$ 0.84
1250$ 0.71
2500$ 0.68
5000$ 0.65
NewarkEach 1$ 2.56
10$ 1.47
100$ 1.34
500$ 1.14
1000$ 1.05
3000$ 1.00
5000$ 0.99

Description

General part information

STF4N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.