TP2520N8-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -200V, 12 OHM
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TP2520N8-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -200V, 12 OHM
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Technical Specifications
Parameters and characteristics for this part
| Specification | TP2520N8-G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 260 mA |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-243AA |
| Rds On (Max) @ Id, Vgs | 12 Ohm |
| Supplier Device Package | TO-243AA (SOT-89) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.70 | |
| 25 | $ 1.43 | |||
| 100 | $ 1.29 | |||
| Digi-Reel® | 1 | $ 1.70 | ||
| 25 | $ 1.43 | |||
| 100 | $ 1.29 | |||
| Tape & Reel (TR) | 2000 | $ 1.29 | ||
| Microchip Direct | T/R | 1 | $ 1.70 | |
| 25 | $ 1.43 | |||
| 100 | $ 1.29 | |||
| 1000 | $ 1.09 | |||
| 5000 | $ 1.00 | |||
| 10000 | $ 0.92 | |||
TP2520 Series
MOSFET, P-Channel Enhancement-Mode, -200V, 12 Ohm
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Package / Case | Technology | Rds On (Max) @ Id, Vgs | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TP2520N8-G | 125 pF | 20 V | 260 mA | 2.4 V | TO-243AA (SOT-89) | Surface Mount | TO-243AA | MOSFET (Metal Oxide) | 12 Ohm | P-Channel | -55 °C | 150 °C | 4.5 V, 10 V | 200 V |
Description
General part information
TP2520 Series
This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources