IPB033N10N5LFATMA1

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Infineon Technologies

OPTIMOS™ 5 LINEAR FET N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 3.3 MOHM; WIDE SOA

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IPB033N10N5LFATMA1

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Infineon Technologies

OPTIMOS™ 5 LINEAR FET N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 3.3 MOHM; WIDE SOA

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB033N10N5LFATMA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Input Capacitance (Ciss) (Max) @ Vds	460 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	179 W
Rds On (Max) @ Id, Vgs [Max]	3.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4.1 V

IPB033 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	FET Type	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]	Technology
Infineon Technologies IPB033N10N5LFATMA1	10 V	-55 °C	150 °C	179 W	N-Channel	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 V	120 A	Surface Mount	460 pF	102 nC	4.1 V	3.3 mOhm	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.13
		10	$ 3.36
		100	$ 2.50
		500	$ 2.42
	Digi-Reel®	1	$ 4.13
		10	$ 3.36
		100	$ 2.50
		500	$ 2.42
	Tape & Reel (TR)	1000	$ 1.97
Newark	Each (Supplied on Full Reel)	1000	$ 3.16

Description

General part information

IPB033 Series

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (RDS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art RDS(on)of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Documents

Technical documentation and resources